Hardware Reviews

Samsung SSD 860 PRO & EVO 1 TB Review

It’s time. Samsung presents the next generation of its popular SSDs. Although SATA is already a thing of the past due to the much faster NVMe protocol, it is still more popular with many users. So it’s no wonder that despite the limited speed, Samsung is launching new models in the form of the 860 series. We took a close look at the Samsung SSD 860 EVO and Samsung SSD 860 PRO in our test.

Even though the Samsung SSD 850 series has already nibbled at the limit of SATA, which is 600 MBit/s gross, Samsung was able to increase the speed again. The Samsung SSD 860 PRO offers up to 560 MB/s reading and 530 MB/s writing. The Samsung SSD 860 EVO reads at 550 MB/s and writes at 520 MB/s and is therefore 10 MB/s slower. But that’s not the only difference. Compared to the 850 series, the durability could be significantly increased. The TBW (Total Bytes Written) is now at a maximum of 4,800 TB (Terabyte). NAND flash memory for the 860 PRO Samsungs is V-NAND with 2-bit MLC technology, while the 860 EVO uses 3-bit MLC. This difference also goes hand in hand with low power consumption for the 860 PRO.

As controller Samsung relies on the new MJX controller. This causes a slight increase in speed, which also affects the IOPS. Overall, however, the speed is not slowed down by the memory, but by the interface. The most important improvements are therefore durability and energy consumption.

Samsung SSD 860 Series Specifications

Capacity 256 GB 512 GB 1 TB 2 TB 4 TB
Hardware Information Interface SATA 6 Gb/s, compatible with SATA 3 Gb/s & 1.5 Gb/s
Controller Samsung MJX-Controller
NAND Flash memory Samsung V-NAND memory architecture with 2-bit MLC technology
DRAM cache memory 512 MB LPDDR4 512 MB LPDDR4 1 GB LPDDR4 2 GB LPDDR4 4 GB LPDDR4
Form factor 2.5 inch
Maximum performance Sequential Reading 560 MB/s
sequential writing 530 MB/s
4KB Ran. Read (QD1) 11,000 IOPS
4KB Ran. Write (QD1) 43,000 IOPS
4KB Ran. Read (QD32) 100,000 IOPS
4KB Ran. Write (QD32) 90.000 IOPS
Energy requirement (typical) Idle (DIPM switched on) 40 mW
For activity (average) 2.0 W 2.0 W 2.2 W 2.2 W 2.2 W
Device Sleep (DVSLP) 2 mW 2 mW 2.5 mW 4.5 mW 7 mW
Reliability MTBF 2 million hours
warranty TBW (Total Bytes Written) 300 TB 600 TB 1,200 TB 2.400 TB 4,800 TB
Guarantee duration 5 years limited
Supported functions TRIM (requires operating system support), Garbage Collection, S.M.A.R.T
data security AES 256 Bit Full Disk Encryption (FDC), TCG/Opal V2.0, Encrypted Drive (IEEE1667)
Capacity 250 GB 500 GB 1 TB 2 TB 4 TB
Hardware Information Interface SATA 6 Gb/s, compatible with SATA 3 Gb/s & 1.5 Gb/s
Controller Samsung MJX-Controller
NAND Flash memory Samsung V-NAND memory architecture with 3-bit MLC technology
DRAM cache memory 512 MB LPDDR4 512 MB LPDDR4 1 GB LPDDR4 2 GB LPDDR4 4 GB LPDDR4
Form factor 2.5 inch, M.2 (2280), mSATA
Maximum performance Sequential Reading 550 MB/s
sequential writing 520 MB/s
4KB Ran. Read (QD1) 10,000 IOPS
4KB Ran. Write (QD1) 42,000 IOPS
4KB Ran. Read (QD32) 98,000 IOPS
4KB Ran. Write (QD32) 90.000 IOPS
Energy requirement (typical) Idle (DIPM switched on) 50 mW
For activity (average) 2.2 W 2.5 W 3.0 W 3.0 W 3.0 W
Device Sleep (DVSLP) 2 mW 2 mW 2.6 mW 5 mW 8 mW
Reliability MTBF 1.5 million hours
warranty TBW (Total Bytes Written) 150 TB 300 TB 600 TB 1,200 TB 2.400 TB
Guarantee duration 5 years limited
Supported functions TRIM (requires operating system support), Garbage Collection, S.M.A.R.T
Data security AES 256 Bit Full Disk Encryption (FDC), TCG/Opal V2.0, Encrypted Drive (IEEE1667)

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Simon Lüthje

I am co-founder of this blog and am very interested in everything that has to do with technology, but I also like to play games. I was born in Hamburg, but now I live in Berlin.

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