Samsung V7 QLC: 3rd generation QLC NAND flash with 4 bits per memory cell

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Samsung announced the now third generation QLC NAND flash with 4 bits per memory cell at Samsung Tech Day 2021. In combination with the 176-layer design, this results in a significantly higher operating speed in the Samsung V7 QLC. Samsung V7 QLC gets faster QLC NAND with 4 bits per cell has already been used … (Weiterlesen...)
 
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